Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates

Red-emitting (≈643 nm) InGaN multiquantum well active device layers and micro-LEDs are grown by metal organic chemical vapor deposition (MOCVD) on relaxed templates, the latter created via thermal decomposition of an underlayer, examined power- temperature-dependent photoluminescence electrical measurements. Maximum internal quantum efficiencies determined to be 7.5% at excitation power density 13 W cm−2, radiative recombination occurs through monomolecular recombination, fabricated do not show any efficiency degradation with decreasing size. Peak on-wafer external (EQE) a 5 × μm2 is 0.44%, demonstrating that thermally decomposed “strain-relaxing” underlayers may useful for long wavelength micro-LED applications.